Description
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
FEATURES
-Low Drive Power
-Low VCE(sat)
-Discrete Super-Fast Recovery
-High Frequency Operation
-Isolated Baseplate for Easy Heat Sinking
SPECIFICATIONS
Package | Bulk | |
Product Status | Obsolete | |
IGBT Type | - | |
Configuration | Half Bridge | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Current - Collector (Ic) (Max) | 75 A | |
Power - Max | 600 W | |
Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 75A | |
Current - Collector Cutoff (Max) | 1 mA | |
Input Capacitance (Cies) @ Vce | 15 nF @ 10 V | |
Input | Standard | |
NTC Thermistor | No | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | Module |
Features
Condition:
NEW
Attachments
MANUFACTURERS
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