Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
FEATURES
-Low Drive Power
-Low VCE(sat)
-Discrete Super-Fast Recovery
-High Frequency Operation
-Isolated Baseplate for Easy Heat Sinking
SPECIFICATIONS
| Package | Bulk | |
| Product Status | Obsolete | |
| IGBT Type | - | |
| Configuration | Half Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Current - Collector (Ic) (Max) | 75 A | |
| Power - Max | 600 W | |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 75A | |
| Current - Collector Cutoff (Max) | 1 mA | |
| Input Capacitance (Cies) @ Vce | 15 nF @ 10 V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
Brands:
MITSUBISHI ELECTRIC
Condition:
new
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