Description
| Manufacturer: | Mitsubishi Electric | |
| Product Category: | IGBT Modules | |
| Product: | IGBT Silicon Modules | |
| Configuration: | Dual | |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV | |
| Collector-Emitter Saturation Voltage: | 1.9 V | |
| Continuous Collector Current at 25 C: | 800 A | |
| Gate-Emitter Leakage Current: | 500 nA | |
| Pd - Power Dissipation: | 3.485 kW | |
| Minimum Operating Temperature: | - 40 C | |
| Maximum Operating Temperature: | + 150 C | |
| Brand: | Mitsubishi Electric | |
| Maximum Gate Emitter Voltage: | 20 V | |
| Mounting Style: | Screw | |
| Product Type: | IGBT Modules | |
| Subcategory: | IGBTs | |
| Technology: | Si |
Features
Condition:
NEW
Attachments
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