Description
Manufacturer: | Mitsubishi Electric | |
Product Category: | IGBT Modules | |
Product: | IGBT Silicon Modules | |
Configuration: | Dual | |
Collector- Emitter Voltage VCEO Max: | 1.2 kV | |
Collector-Emitter Saturation Voltage: | 1.9 V | |
Continuous Collector Current at 25 C: | 800 A | |
Gate-Emitter Leakage Current: | 500 nA | |
Pd - Power Dissipation: | 3.485 kW | |
Minimum Operating Temperature: | - 40 C | |
Maximum Operating Temperature: | + 150 C | |
Brand: | Mitsubishi Electric | |
Maximum Gate Emitter Voltage: | 20 V | |
Mounting Style: | Screw | |
Product Type: | IGBT Modules | |
Subcategory: | IGBTs | |
Technology: | Si |
Features
Condition:
NEW
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